The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Oct. 05, 2001
Applicant:
Inventors:
Koichi Yatsuda, Saga, JP;
Tetsuya Nishiara, Yokohama, JP;
Kouichiro Inazawa, Tokyo, JP;
Shin Okamoto, Kofu, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ; H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/13065 ; H01L 2/1311 ;
Abstract
An etching gas is supplied into a process chamber and turned into plasma so as to etch a silicon nitride film arranged on a field silicon oxide film on a wafer (w). A mixture gas containing at least CH F gas and O gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH F /O ) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.