The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Apr. 17, 2002
Satoru Kawakami, Sagamihara, JP;
Shigemi Murakawa, Sakura, JP;
Mitsuhiro Yuasa, Suginami-ku, JP;
Toshiaki Hongoh, Nakakoma-gun, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.