The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Oct. 16, 2000
Shuo-Yen Tai, Kaoshon, TW;
Ming-Cheng Yang, Taipei, TW;
Jiun-Fang Wang, Hsin-Chu, TW;
Champion Yi, Hsin-Chu, TW;
ProMOS Technologies, Inc., Hsin-Chu, TW;
Abstract
A new method is provided for determining the optimum film thickness of a film that is to be deposited over a semiconductor surface. The invention observes the electrical current and the therefrom resulting torque that is supplied to a rotating part of a polishing apparatus, from this the CMP end-point can be determined for a reference film that has been deposited. This technique is known as the “CMP end-point detection” technique. The invention addresses observing CMP end-point curves for films of various thicknesses and compares these CMP end-point curves of one film thickness with each other and calculates a deviation for multiple layers (deposited on different wafers) of that film thickness. The process is repeated for different film thickness. The film thickness that has a deviation of the CMP end-point curve that closest resembles an optimum deviation is the film thickness that is selected as having the optimum thickness for the deposition of that film.