The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2002
Filed:
Nov. 07, 2000
Kirio Itoi, Nishishirakawa-gun, JP;
Eiichi Iino, Annaka, JP;
Tohru Ishizuka, Nishishirakawa-gun, JP;
Tomohiko Ohta, Nishishirakawa-gun, JP;
Izumi Fusegawa, Nishishirakawa-gun, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
In a method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in the quartz crucible, the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth, or a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is controlled to be 0.3 or more and 0.5 or less. There are provided methods for producing a silicon single crystal based on the CZ method in which a horizontal magnetic field is applied, which can produce a silicon single crystal ingot of high uniformity of interstitial oxygen concentration along the growth direction of the grown single crystal with high productivity and high yield.