The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2002

Filed:

Jun. 23, 2000
Applicant:
Inventors:

Marie Angelopoulos, Cortlandt Manor, NY (US);

Ari Aviram, Croton-on-Hudson, NY (US);

C. Richard Guarnieri, Somers, NY (US);

Wu-Song Huang, Poughkeepsie, NY (US);

Ranee Kwong, Wappingers Falls, NY (US);

Wayne M. Moreau, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C 1/825 ; G03C 1/835 ; G08G 7/716 ; G08G 7/724 ; G08G 7/726 ; G08G 7/704 ;
U.S. Cl.
CPC ...
G03C 1/825 ; G03C 1/835 ; G08G 7/716 ; G08G 7/724 ; G08G 7/726 ; G08G 7/704 ;
Abstract

Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.


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