The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2002

Filed:

Oct. 04, 1999
Applicant:
Inventors:

Michihiko Yanagisawa, Ayase, JP;

Takeshi Sadohara, Ayase, JP;

Chikai Tanaka, Kanagawa-Ken, JP;

Shinya Iida, Ayase, JP;

Yasuhiro Horiike, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/6511 ;
U.S. Cl.
CPC ...
C23C 1/6511 ;
Abstract

A wafer flattening system is provided to consecutively and automatically remove the natural oxide film from a wafer and flatten and smooth the wafer so as to improve the surface roughness of the wafer and improve the work efficiency. A step of immersing the wafer in an aqueous solution of hydrofluoric acid of a natural oxide film removing device is performed so as to remove the natural oxide film, then followed by a step of locally etching the surface of the wafer at a local etching apparatus by an activated species gas produced from SF gas to flatten the surface. Then, a step of giving a mirror finish to the wafer surface by a CMP apparatus is performed to smooth it. It is also possible to perform the step of removal of the natural oxide film by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF gas and H gas and possible to perform the step of smoothing by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF gas and O gas.


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