The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Mar. 03, 1998
Chuang-Chuang Tsai, San Jose, CA (US);
Takako Takehara, Hayward, CA (US);
Regina Qiu, Cupertino, CA (US);
Yvonne LeGrice, Mountain View, CA (US);
William Reid Harshbarger, San Jose, CA (US);
Robert McCormick Robertson, Santa Clara, CA (US);
Applied Komatsu Technology, Inc., Tokyo, JP;
Abstract
A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.