The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Feb. 17, 1999
Jeng H. Hwang, Cupertino, CA (US);
Chentsau Ying, Cupertino, CA (US);
Guang Xiang Jin, San Jose, CA (US);
Steve S. Y. Mak, Pleasanton, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of etching an electrode layer (e.g., a platinum electrode layer or an iridium electrode layer) disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 &mgr;m and having a profile equal to or greater than about 85°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising oxygen and/or chlorine, argon and a gas selected from the group consisting of BCl,, HBr, HCl and mixtures thereof. A semiconductor device having a substrate and a plurality of electrodes supported by the substrate. The electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 &mgr;m and a profile equal to or greater than about 85°.