Guang Xiang Jin

Title: Innovations of Guang Xiang Jin in Semiconductor Technology

Introduction

Guang Xiang Jin is a notable inventor based in San Jose, CA, who has made significant contributions to the field of semiconductor technology. His innovative work focuses on methods that enhance the efficiency and precision of semiconductor devices.

Latest Patents

One of Guang Xiang Jin's key patents is titled "Iridium etchant methods for anisotropic profile." This patent describes a method of etching an electrode layer, such as a platinum or iridium electrode layer, on a substrate to create a semiconductor device. The device features a plurality of electrodes that are separated by a distance equal to or less than about 0.3 µm and have a profile equal to or greater than about 85°. The method involves heating the substrate to a temperature greater than about 150° C. and etching the electrode layer using a high-density inductively coupled plasma of an etchant gas that includes oxygen and/or chlorine, argon, and a gas selected from the group consisting of BCl, HBr, HCl, and their mixtures.

Career Highlights

Guang Xiang Jin is currently employed at Applied Materials, Inc., a leading company in the semiconductor manufacturing industry. His work at Applied Materials has allowed him to develop and refine innovative techniques that are crucial for advancing semiconductor technology.

Collaborations

Throughout his career, Guang Xiang Jin has collaborated with esteemed colleagues, including Jeng H Hwang and Chentsau Chris Ying. These collaborations have fostered an environment of innovation and have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Guang Xiang Jin's contributions to semiconductor technology, particularly through his patent on iridium etchant methods, highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in this critical field.