The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Oct. 15, 1999
Antonio L. P. Rotondaro, Dallas, TX (US);
Reima Tapani Laaksonen, Dallas, TX (US);
Robert Kraft, Plano, TX (US);
Charlotte M. Appel, Dallas, TX (US);
Rebecca J. Gale, Allen, TX (US);
Katherine E. Violette, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A plasma process is described which produces an undamaged and uncontaminated silicon surface by consuming silicon by continuous oxidation through a surface oxide layer and a simultaneous etch of the exposed silicon oxide surface. The surface silicon dioxide layer thickness is controlled as an equilibrium between oxide growth from oxygen atoms reaching the silicon surface and etching of the oxide surface. The silicon dioxide protects the silicon surface from plasma damage and from contamination.