Richardson, TX, United States of America

Rebecca J Gale

This inventor holds 3 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1992-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rebecca J Gale. Retrieved from https://idiyas.com/inventor/rebecca-j-gale

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 167(Granted Patents)


Location History:

  • Richardson, TX (US) (1992)
  • Allen, TX (US) (2001)

Company Filing History:


Years Active: 1992-2001

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Rebecca J. Gale

Introduction

Rebecca J. Gale is a prominent inventor based in Richardson, TX (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on advancing silicon processing methods and enhancing testing techniques in semiconductor manufacturing.

Latest Patents

One of her latest patents is a silicon processing method that describes a plasma process. This process produces an undamaged and uncontaminated silicon surface by consuming silicon through continuous oxidation via a surface oxide layer. The method controls the thickness of the silicon dioxide layer as an equilibrium between oxide growth from oxygen atoms and etching of the oxide surface. This protective layer safeguards the silicon surface from plasma damage and contamination.

Another notable patent involves a scanning electron microscope-based parametric testing method. In this innovation, a scanning electron microscope is connected to a test structure formed on a semiconductor wafer. The test structure comprises a plurality of first parallel structures and second parallel structures that interlock with the first. An island is formed within a grid created by these structures and is visually monitored to determine whether it is electrically separated or shorted to the mesh.

Career Highlights

Rebecca J. Gale is currently employed at Texas Instruments Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing methods that enhance the reliability and efficiency of silicon processing.

Collaborations

Some of her notable coworkers include Katherine E. Violette and Shivaling S. Mahant-Shetti, who have collaborated with her on various projects within the semiconductor field.

Conclusion

Rebecca J. Gale's innovative contributions to semiconductor technology have made a lasting impact on the industry. Her patents reflect her commitment to advancing the field and improving manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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