The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Jul. 06, 1999
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
The present invention discloses a method of forming self-aligned unlanded via holes. First, a substrate having a patterned conductive layer on its surface is provided, and then a first dielectric layer is deposited on the substrate by using high density plasma chemical vapor deposition (HDP CVD). Next, a silicon nitride layer and a second dielectric layer are sequentially deposited on the first dielectric layer. Thereafter, the second dielectric layer, the silicon nitride layer and the first dielectric layer are etched back to remove a portion of the silicon nitride layer overlying the patterned conductive layer. Finally, a third dielectric layer is deposited, and then via holes are defined in the third dielectric layer.