The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Aug. 06, 1999
Fu-Sheng Lee, Tai-Chung, TW;
Chien-Chen Chen, Hsin-Chu, TW;
Jiun-Chung Lee, Taoyuan, TW;
Hsin-Chieh Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A copper isotope is added to the layer of copper that is deposited to form the metal interface. Radioactivity emitted by the copper layer is measured during copper polishing, endpoint of the copper CMP is reached when this radioactivity starts to rapidly decrease. Another approach is to measure the radioactivity of the copper slurry that is removed during copper polishing. Polishing end-point is reached when the copper slurry radioactivity starts to rapidly increase. Yet another approach is to add copper isotopes to the copper seed layer and measure the radioactivity emitted by the seed layer. Polishing end-point is reached when the radioactivity emitted by the seed layer starts to rapidly increase.