The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2000

Filed:

Apr. 13, 1999
Applicant:
Inventors:

Gen Murakami, Machida, JP;

Kunihiro Tsubosaki, Hino, JP;

Masahiro Ichitani, Kodaira, JP;

Kunihiko Nishi, Kokubunji, JP;

Ichiro Anjoh, Koganei, JP;

Asao Nishimura, Ushiku, JP;

Makoto Kitano, Chiyoda-mura, JP;

Akihiro Yaguchi, Chiyoda-mura, JP;

Sueo Kawai, Iwama-machi, JP;

Masatsugu Ogata, Hitachi, JP;

Syuuji Eguchi, Hitachi, JP;

Hiroyoshi Kokaku, Hitachi, JP;

Masanori Segawa, Hitachi, JP;

Hiroshi Hozoji, Hitachi, JP;

Takashi Yokoyama, Hitachi, JP;

Noriyuki Kinjo, Hitachi, JP;

Aizo Kaneda, Yokohama, JP;

Junichi Saeki, Yokohama, JP;

Shozo Nakamura, Yokohama, JP;

Akio Hasebe, Yokohama, JP;

Hiroshi Kikuchi, Zushi, JP;

Isamu Yoshida, Yokohama, JP;

Takashi Yamazaki, Ohme, JP;

Kazuyoshi Oshima, Ohme, JP;

Tetsurou Matsumoto, Higashiyamato, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438123 ; 438113 ; 438118 ; 438123 ; 438124 ; 438125 ; 438126 ; 438127 ; 438460 ;
Abstract

As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the 'Lead-On-Chip' or 'Chip-On-Lead' structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.


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