The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2000

Filed:

Feb. 17, 1998
Applicant:
Inventors:

Soichi Inoue, Yokohama, JP;

Hisashi Kaneko, Fujisawa, JP;

Masahiko Hasunuma, Yokohama, JP;

Takamasa Usui, Kawasaki, JP;

Masami Aoki, Fishkill, NY (US);

Kazuko Yamamoto, Tokyo, JP;

Sachiko Kobayashi, Ichikawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ;
U.S. Cl.
CPC ...
430312 ; 430-5 ; 430 30 ; 430296 ; 430394 ;
Abstract

A method of manufacturing a semiconductor device, comprises the steps of forming a first transfer pattern corresponding to a mask pattern on a major surface side of a semiconductor substrate through a first mask plate on which the first mask pattern having a straight portion and a bent portion is formed, and forming a second transfer pattern corresponding to a second mask pattern on a major surface side of the semiconductor substrate through a second mask plate on which the second mask pattern having a pattern arranged at a position corresponding to the straight portion is formed.


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