The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Dec. 08, 1997
Yoshihiko Nakano, Tokyo, JP;
Rikako Kani, Yokohama, JP;
Shuji Hayase, Yokohama, JP;
Yasuhiko Sato, Yokohama, JP;
Seiro Miyoshi, Kawasaki, JP;
Toru Ushirogouchi, Yokohama, JP;
Sawako Yoshikawa, Yokohama, JP;
Hideto Matsuyama, Yokohama, JP;
Yasunobu Onishi, Yokohama, JP;
Masaki Narita, Yokohama, JP;
Toshiro Hiraoka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.