The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
May. 07, 1998
Jian-Hui Ye, Singapore, SG;
Yuan-Ping Lee, Singapore, SG;
Mei-Sheng Zhou, Singapore, SG;
Yong-Feng Lu, Singapore, SG;
Chartered Semiconductor Manufacturing Company, Ltd., Singapore, SG;
Abstract
A method of stripping photoresist and polymer from a wafer after a dry etch of a nitrade or a polysilicon layer that immerses the wafer in a peroxydisulfate (S.sub.2 O.sub.8.sup.2-)/HCl wet bath and while the wafer is still immersed, irradiates the wafer with a UV laser. The method comprises: (a) forming an silicon nitride layer 24 and a photoresist pattern 28 over a semi conductor structure 10; (b) dry etching the silicon nitride layer 24 thus forming a polymer 30 over the photoresist pattern, and the silicon nitride layer, (c) Immersing the substrate, the photoresist pattern, the polymer 30 in a liquid bath 34 comprising (1) peroxydisulfate (S.sub.2 O.sub.8.sup.2-), (2) HCl, and (3) water; and irradiating the photoresist pattern 28 and polymer layer 30 with a UV laser thereby removing the photoresist 28 and polymer 30.