The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Feb. 09, 1998
Je Wang, Hsin-Chu, TW;
Ji-Chung Huang, Hsin-Chu, TW;
Han-Chung Chen, Hsin-Chu, TW;
Chung-En Hsu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A new method of aluminum plug metallization in the manufacture of an integrated circuit device is described. An insulating layer is provided over the surface of a semiconductor substrate. At least one contact opening is provided through the insulating layer to the semiconductor substrate. A barrier metal layer is deposited over the surface of the insulating layer and within the contact opening. An aluminum layer is sputter deposited over the barrier metal layer and within the contact opening wherein a void is left within the contact opening. The aluminum layer is covered with a dielectric layer wherein the expansion coefficient of the dielectric layer is smaller than the expansion coefficient of the aluminum layer. The aluminum layer is reflowed using rapid thermal annealing wherein the overlying dielectric layer forces the aluminum layer to fill the contact opening completing the metallization in the fabrication of an integrated circuit device.