The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 1999

Filed:

Jun. 16, 1997
Applicant:
Inventors:

Akihiko Isao, Chichibu, JP;

Susumu Kawada, Chichibu, JP;

Yoshihiro Saito, Chichibu, JP;

Tsuneo Yamamoto, Chichibu, JP;

Atsushi Hayashi, Chichibu, JP;

Nobuyuki Yoshioka, Itami, JP;

Akira Chiba, Itami, JP;

Junji Miyazaki, Itami, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; C23C / ;
U.S. Cl.
CPC ...
20419215 ; 20419222 ; 20419223 ; 20419226 ; 430-5 ;
Abstract

A phase-shifting photomask blank is made by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.


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