The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Oct. 06, 1997
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin-Chu, TW;
Abstract
An improved method of forming a tunnel-free tungsten plug is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer of borophospho-tetraethoxysilane (BP-TEOS) is deposited overlying the semiconductor device structures. Contact openings are etched through the insulating layer to the underlying semiconductor device structures wherein a tunnel opens in the insulating layer between contact openings. The semiconductor substrate is covered with a first barrier metal layer. The semiconductor substrate is coated with a spin-on-glass layer wherein the contact openings and the tunnel are filled with the spin-on-glass. The spin-on-glass is anisotropically etched away whereby the spin-on-glass remains only within the tunnel. The semiconductor substrate is covered with a second barrier metal layer. The contact openings are filled with tungsten which is etched back to form tungsten plugs within the contact openings wherein the filled tunnel provides tunnel-free tungsten plugs in the fabrication of the integrated circuit device.