The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Aug. 01, 1996
Applicant:
Inventors:
Chaochieh Tsai, Taichung, TW;
Yuan-Chang Huang, Hsin-Chu, TW;
Juing-Yi Wu, Chung-Li, TW;
Shun-Liang Hsu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manfacturing Company, Ltd., Hsin-Chu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438443 ; 438439 ; 438297 ;
Abstract
A field oxide region and method of forming a field oxide region using a LOCOS process and nitride spacers formed on the sidewalls of the field oxide regions. During the LOCOS process recesses are formed in the field oxide which result in poor step coverage during successive process steps. Nitride spacers are formed on the sidewalls of the field oxide covering the recesses. The spacers provide a smooth surface over the field oxide and improved step coverage during subsequent process steps.