The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
May. 06, 1997
Applicant:
Inventors:
Mong-Song Liang, Hsin-Chu, TW;
Julie Huang, Hsin-Chu, TW;
Tse-Liang Ying, Hsin-Chu, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co. Ltd., Hsun-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438254 ; 438640 ;
Abstract
The present invention discloses a method for making low-topography buried capacitor including the steps of first depositing oxide layers, and then forming a small pre-contact hole by a dry etch method and a large contact hole by a wet etch method while using silicon nitride caps and sidewall spacers previously deposited on the word lines and on the bit lines as etch stop layers. A buried capacitor that has significantly improved topography can be fabricated in a semiconductor device.