The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Oct. 01, 1996
Applicant:
Inventors:
Ajay Kumar, Sunnyvale, CA (US);
Jeffrey Chinn, Foster City, CA (US);
Shashank C Deshmukh, Sunnyvale, CA (US);
Weinan Jiang, Santa Clara, CA (US);
Rolf Adolf Guenther, Monte Sereno, CA (US);
Bruce Minaee, Campbell, CA (US);
Mark Wiltse, Redwood City, CA (US);
Assignee:
Applied Materials, Inc, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438714 ; 438719 ; 438738 ; 438659 ; 252 791 ;
Abstract
An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.