The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
Dec. 21, 1992
Michael A McNeilly, Palo Alto, CA (US);
John M deLarios, Palo Alto, CA (US);
Glenn L Nobinger, Santa Clara, CA (US);
Wilbur C Krusell, San Jose, CA (US);
Dah-Bin Kao, Palo Alto, CA (US);
Ralph K Manriquez, Saratoga, CA (US);
Chiko Fan, Danville, CA (US);
Genus, Inc., Sunnyvale, CA (US);
Abstract
A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer surface to remove organics, followed by vapor phase etching. An integrated apparatus for cleaning organic and, subsequently, vapor phase etching, is also described. In embodiments of the invention cooling steps are incorporated to increase throughput, an on-demand vaporizer is provided to repeatably supply vapor at other than azeotropic concentration, and a residue-free etch process is provided.