The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1998
Filed:
Jan. 22, 1997
Michael Stuart Gordon, Somers, NY (US);
Rodney Arthur Kendall, Ridgefield, CT (US);
David John Pinckney, Danbury, CT (US);
James Louis Speidell, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for reducing contamination in a silicon membrane mask in a lithography system is described. The method includes: doping the top surface of the silicon membrane mask with boron to lower the electrical resistance of the mask; subsequently metalizing the surface of the mask to further lower its electrical resistance; and, finally, applying a voltage between opposite surfaces of the mask, the voltage generating an electric field that passes through the membrane mask, heating the membrane mask. The method further includes: calculating distortions in the shape of each of the patterns within the mask caused by heating the membrane mask; compensating for the proximity of other shapes positioned in the vicinity of each of the patterns; and appropriately modifying the shape of each of the patterns. The above described method can be equally applied to an e-beam system or to an ion-beam lithography system, and both, to stencil masks and to scattering masks.