The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Oct. 11, 1995
Applicant:
Inventors:
Yuh-Jia (Jim) Su, Cupertino, CA (US);
Yuen-Kui (Jerry) Wong, Fremont, CA (US);
Kam S Law, Union City, CA (US);
Haruhiro (Harry) Goto, Saratoga, CA (US);
Assignee:
Applied Komatsu Technology, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438149 ; 438701 ; 438713 ; 438724 ; 438978 ;
Abstract
A method of etching openings in a dielectric layer of a semiconductor device by utilizing a novel etchant gas system of sulfur hexafluoride/chlorine such that sloped sidewalls can be formed in the openings having a desired taper of between about 20.degree. and about 85.degree. for achieving improved step coverage and profile control of the TFT fabrication process.