The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 1997
Filed:
Apr. 26, 1995
Reiji Niino, Wappingers Falls, NY (US);
Yoshiyuki Fujita, Kofu, JP;
Hideki Lee, Nirasaki, JP;
Yasuo Imamura, Yokohama, JP;
Toshiharu Nishimura, Kofu, JP;
Yuuichi Mikata, Kawasaki, JP;
Shinji Miyazaki, Yokkaichi, JP;
Takahiko Moriya, Yokohama, JP;
Katsuya Okumura, Poughkeepsie, NY (US);
Hitoshi Kato, Kofu, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.