The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Jun. 07, 1995
Applicant:
Inventors:
Yuh-Jia Su, Cupertino, CA (US);
Yuen-Kui Wong, Fremont, CA (US);
Kam S Law, Union City, CA (US);
Haruhiro Goto, Saratoga, CA (US);
Assignee:
Applied Komatsu Technology, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
216 76 ; 1566271 ; 216 60 ;
Abstract
An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 80 .ANG./min is disclosed. Chamber pressure is maintained at least as low as 30 mTorr. A reactive gas that includes a halogen hydride such as HCl is used alone or in combination with another reactive gas such as Cl.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.