The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
May. 15, 1995
Shunichi Uzawa, Tokyo, JP;
Takao Kariya, Hino, JP;
Makoto Higomura, Yokohama, JP;
Nobutoshi Mizusawa, Yamato, JP;
Ryuichi Ebinuma, Kawasaki, JP;
Kohji Uda, Yokohama, JP;
Kunitaka Ozawa, Isehara, JP;
Mitsuaki Amemiya, Atsugi, JP;
Eiji Sakamoto, Sagamihara, JP;
Naoto Abe, Isehara, JP;
Kenji Saitoh, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device manufacturing SOR X-ray exposure apparatus wherein, after a mask and a semiconductor wafer are aligned, and SOR X-ray is used to transfer a semiconductor device pattern on the mask onto a resist on the semiconductor wafer. The apparatus includes a mirror unit and an exposure unit for exposing the wafer through the mask to the X-ray from the mirror unit. The mirror unit includes an X-ray mirror for diverging the X-ray in a desired direction, a first chamber for providing a desired vacuum ambience around the X-ray mirror and a first supporting device for supplying the X-ray mirror. The exposure unit includes a shutter for controlling the exposure, a mask stage for holding the mask, a wafer stage for holding the wafer, a second chamber for providing a desired He ambience around the mask stage and the wafer stage, a frame structure for mounting the mask stage and the wafer stage and a second supporting device for supporting the frame structure. By this, a more highly integrated semiconductor device can be produced.