The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1995
Filed:
Sep. 17, 1992
John E Cronin, Milton, VT (US);
Carter W Kaanta, Colchester, VT (US);
Donald M Kenney, Shelburne, VT (US);
Michael L Kerbaugh, Jericho, VT (US);
Howard S Landis, Underhill, VT (US);
Brian J Machesney, Burlington, VT (US);
Paul Parries, Wappingers Falls, NY (US);
Rosemary A Previti-Kelly, Richmond, VT (US);
John F Rembetski, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor fabrication process for forming borderless contacts (130, 170, 172) using a removable mandrel (110). The process involves depositing a mandrel on an underlying barrier layer (100) designed to protect underlying structures (40) formed on a substrate (24). The mandrel is made from a material that will etch at a faster rate than the barrier layer so as to permit the formation of openings in the mandrel to be stopped on the barrier layer without penetrating such layer. After depositing a contact (130) in a first opening (120) formed in the mandrel, a second opening (140) is formed and a second contact (170) is deposited therein. Thereafter, the mandrel is removed and replaced with a layer of solid dielectric material (180).