The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1995
Filed:
May. 28, 1993
Takashi Yoshitomi, Yokohama, JP;
Masanobu Saito, Chiba, JP;
Hisayo Momose, Tokyo, JP;
Hiroshi Iwai, Kawasaki, JP;
Yukihiro Ushiku, Yokohama, JP;
Mizuki Ono, Yokohama, JP;
Yasushi Akasaka, Yokohama, JP;
Hideaki Nii, Yokohama, JP;
Satoshi Matsuda, Yokohama, JP;
Yasuhiro Katsumata, Chigasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A diffused layer serves as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.