The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 1995

Filed:

Jul. 22, 1994
Applicant:
Inventors:

Masatsugu Izu, Bloomfield Hills, MI (US);

Buddie R Dotter, II, Utica, MI (US);

Stanford R Ovshinsky, Bloomfield Hills, MI (US);

Wataru Hasegawa, Higashi-Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118718 ; 1187 / ; 1187 / ; 1187 / ; 1187 / ; 118724 ; 118725 ; 118730 ;
Abstract

Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.


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