The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1991
Filed:
Dec. 28, 1988
Richard E Ahrens, Muhlenberg Township, Berks County, PA (US);
Albert G Baca, Reading, PA (US);
Randolph H Burton, Amity Township, Berks County, PA (US);
Michael P Iannuzzi, Robeson Township, Berks County, PA (US);
Alex Lahav, South Whitehall Township, Lehigh County, PA (US);
Shin-Shem Pei, New Providence Township, Union County, NJ (US);
Claude L Reynolds, Jr, Spring Township, Berks County, PA (US);
Thi-Hong-Ha Vuong, Wyomissing Hills Township, Berks County, PA (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs), a desired wafer structure for SDHT fabrication and a method for isolating SDHTs on the wafer are disclosed herein. The wafer has epitaxial layers grown on a substrate. The layers are: a buffer layer of GaAs, a first spacer layer of AlGaAs, a donor layer of AlGaAs, a second spacer layer of AlGaAs, a first cap layer of GaAs, an etch-stop layer of AlGaAs and a second cap layer of GaAs. A protective layer of AlGaAs may then be grown on the second cap layer to protect the second cap layer from contamination or damage. Also a superlattice may first be grown on the substrate.