Somerset, NJ, United States of America

Randolph H Burton


Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 60(Granted Patents)


Location History:

  • Somerset, NJ (US) (1983 - 1987)
  • Amity Township, Berks County, PA (US) (1991)

Company Filing History:


Years Active: 1983-1991

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3 patents (USPTO):Explore Patents

Title: Innovator Profile: Randolph H Burton - Shaping the Future of Semiconductor Technology

Introduction:

Randolph H Burton, a prolific inventor based in Somerset, NJ, USA, has made significant contributions to the field of semiconductor technology. With a keen eye for innovation and a wealth of experience, Burton has secured multiple patents and played a vital role in advancing integrated circuit fabrication and LED design.

Latest Patents:

1. Fabrication of GaAs Integrated Circuits:

Burton's patent unveils a cutting-edge process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs). This method involves creating a specialized wafer structure with epitaxial layers that enhance the performance and efficiency of SDHTs. By isolating SDHTs on the wafer and implementing protective measures, Burton's invention paves the way for next-generation semiconductor devices.

2. Asymmetric Chip Design for LEDs:

In another groundbreaking patent, Burton introduces an innovative chip design for surface-emitting LEDs. By asymmetrically positioning the light-emitting spot towards one corner of the chip and incorporating an L-shaped contact, this design maximizes the number of LEDs obtainable from a single wafer. This advancement not only increases efficiency but also reduces production costs, making LED manufacturing more sustainable and economical.

Career Highlights:

Randolph H Burton has accumulated a wealth of experience in renowned companies such as AT&T Bell Laboratories and Bell Telephone Laboratories. His expertise in semiconductor technology and dedication to innovation have earned him a reputation as a leading figure in the industry. Through his work, Burton has consistently pushed the boundaries of what is possible in integrated circuit fabrication and LED technology.

Collaborations:

Throughout his career, Burton has collaborated with esteemed colleagues such as Richard E Ahrens and Albert G Baca. Together, they have combined their expertise to tackle complex challenges in semiconductor research and development. These collaborations have not only yielded significant technological advancements but have also fostered a culture of innovation and knowledge sharing within the industry.

Conclusion:

Randolph H Burton's inventive spirit and dedication to advancing semiconductor technology have solidified his position as a trailblazer in the field. His pioneering patents and collaborative efforts have left an indelible mark on the industry, shaping the future of integrated circuits and LED design. As Burton continues to innovate and inspire, the world can look forward to more groundbreaking developments in semiconductor technology under his guidance.

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