New Providence, NJ, United States of America

Shin-Shem Pei

This inventor holds 6 USPTO granted patents. Top assignee: At&t Bell Laboratories. Active years: 1984-1994.


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 97(Granted Patents)


Location History:

  • New Providence Township, Union County, NJ (US) (1991)
  • New Providence, NJ (US) (1984 - 1994)

Company Filing History:


Years Active: 1984-1994

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Shin-Shem Pei

Introduction

Shin-Shem Pei is a notable inventor based in New Providence, NJ (US). He has made significant contributions to the field of electro-optical devices, holding a total of 6 patents. His work has advanced the technology behind self-electro-optical devices, showcasing his expertise and innovative spirit.

Latest Patents

One of Pei's latest patents is titled "Method for making self-electro-optical device and devices made thereby." In this patent, applicants have discovered a method of reproducibly fabricating SEED devices that have an enhanced contrast ratio. This is achieved by adjusting the thickness of a cap layer in relation to the reflector stacks to form a Fabry-Perot cavity. Specifically, after the growth of the reflector stack and the quantum wells, the optical thickness of the region above the reflector stacks is measured without breaking vacuum. Based on this measurement, a cap layer is grown to a sufficient thickness to form a Fabry-Perot cavity for light of the desired wavelength. The result is a device with enhanced contrast between the 'on' and 'off' states, allowing the state to be directly read without differential processing.

Another significant patent is for "Planar FET-SEED integrated circuits." In this innovation, FETs and quantum well diodes are combined on the same semi-insulating substrate while providing the FETs with protection from spurious voltages. A deeply buried P region in the semi-insulating substrate is partitioned by a high resistivity proton implanted region. This configuration provides both the P region of the quantum well diode and an isolating buried P layer for the FETs.

Career Highlights

Shin-Shem Pei is currently associated with AT&T Bell Laboratories, where he continues to push the boundaries of technology. His work at this prestigious institution has allowed him to collaborate with other talented individuals in the field.

Collaborations

Some of his notable coworkers include Lucian Arthur D'Asaro and Sanghee Park Hui. Their collaborative efforts have contributed to the advancement of various technologies in the electro-optical domain.

Conclusion

Shin-Shem Pei's innovative contributions to the field of electro-optical devices have made a significant impact. His patents reflect a deep understanding of technology and a commitment to advancing the industry.

Profile summary based on public USPTO records.
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