Company Filing History:
Years Active: 1991
Title: Albert G Baca: Innovator in GaAs Integrated Circuits
Introduction
Albert G Baca is a notable inventor based in Reading, PA (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of Gallium Arsenide (GaAs) integrated circuits. His work has implications for the development of advanced electronic devices.
Latest Patents
Albert G Baca holds a patent for the "Fabrication of GaAs integrated circuits." This patent discloses a process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs). The invention details a desired wafer structure for SDHT fabrication and a method for isolating SDHTs on the wafer. The wafer consists of epitaxial layers grown on a substrate, including a buffer layer of GaAs, a first spacer layer of AlGaAs, a donor layer of AlGaAs, a second spacer layer of AlGaAs, a first cap layer of GaAs, an etch-stop layer of AlGaAs, and a second cap layer of GaAs. Additionally, a protective layer of AlGaAs may be grown on the second cap layer to prevent contamination or damage.
Career Highlights
Albert G Baca has worked at AT&T Bell Laboratories, a leading research and development organization in telecommunications. His role at this prestigious institution has allowed him to contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Throughout his career, Albert has collaborated with notable colleagues, including Richard E Ahrens and Randolph H Burton. These collaborations have further enriched his work and contributed to the success of various projects.
Conclusion
Albert G Baca's innovative work in the fabrication of GaAs integrated circuits has made a lasting impact on the field of electronics. His contributions continue to influence the development of advanced technologies.