Company Filing History:
Years Active: 1991
Title: Michael P Iannuzzi: Innovator in GaAs Integrated Circuits
Introduction
Michael P Iannuzzi is a notable inventor based in Robeson, PA (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of Gallium Arsenide (GaAs) integrated circuits. His work has implications for the development of advanced electronic devices.
Latest Patents
Iannuzzi holds a patent for the "Fabrication of GaAs integrated circuits." This patent describes a process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs). The invention includes a desired wafer structure for SDHT fabrication and a method for isolating SDHTs on the wafer. The wafer features epitaxial layers grown on a substrate, including a buffer layer of GaAs, a first spacer layer of AlGaAs, a donor layer of AlGaAs, a second spacer layer of AlGaAs, a first cap layer of GaAs, an etch-stop layer of AlGaAs, and a second cap layer of GaAs. Additionally, a protective layer of AlGaAs may be grown on the second cap layer to prevent contamination or damage.
Career Highlights
Michael P Iannuzzi has worked at AT&T Bell Laboratories, a leading research and development organization. His role at this prestigious institution has allowed him to contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Iannuzzi has collaborated with notable colleagues, including Richard E Ahrens and Albert G Baca. These collaborations have further enriched his work and contributed to the success of his inventions.
Conclusion
Michael P Iannuzzi's innovative work in the fabrication of GaAs integrated circuits showcases his expertise and dedication to advancing technology. His contributions continue to influence the field of electronics and semiconductor manufacturing.