The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 1990
Filed:
Jan. 26, 1989
Hideaki Shimamura, Yokohama, JP;
Masao Sakata, Yokohama, JP;
Shigeru Kobayashi, Tokyo, JP;
Yuji Yoneoka, Yokohama, JP;
Tsuneaki Kamei, Kanagawa, JP;
Tsuneyoshi Kawahito, Yokohama, JP;
Shoyo Fujita, Gunma, JP;
Hiroshi Nakamura, Saitama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.