The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Jul. 07, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;

Inventors:

Chieh-En Chen, Tainan, TW;

Chen-Hsien Lin, Tainan, TW;

Shyh-Fann Ting, Tainan, TW;

Wei-Chih Weng, Tainan, TW;

Hsing-Chih Lin, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01G 4/33 (2006.01); H10D 1/00 (2025.01); H10W 20/40 (2026.01);
U.S. Cl.
CPC ...
H10D 1/696 (2025.01); H01G 4/33 (2013.01); H10D 1/042 (2025.01); H10D 1/043 (2025.01); H10D 1/716 (2025.01); H10W 20/496 (2026.01);
Abstract

Fabricating a metal-insulator-metal (MIM) capacitor structure includes: forming a patterned metallization layer; disposing a dielectric material on the patterned metallization layer; etching one or more deep trenches through the dielectric material to the patterned metallization layer; depositing a MIM multilayer on the dielectric material and inside the one or more deep trenches formed in the dielectric material; and fabricating at least one three-dimensional MIM (3D-MIM) capacitor comprising a portion of the MIM multilayer deposited inside at least one of the one or more deep trenches; and fabricating at least one second capacitor, including at least one shallow 3D-MIM capacitor comprising a portion of the MIM multilayer deposited inside one or more shallow trenches passing partway through the dielectric material that are shallower than the one or more deep trenches, and/or at least one two-dimensional MIM (2D-MIM) capacitor comprising a portion of the MIM multilayer deposited on the dielectric material.


Find Patent Forward Citations

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Chen, Chieh-En. (2026). Metal-insulator-metal capacitors (U.S. Patent No. 12787315). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787315

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