The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Dec. 24, 2022
Intel Corporation, Santa Clara, CA (US);
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Samuel James Bader, Hillsboro, OR (US);
Ahmad Zubair, Hillsboro, OR (US);
Pratik Koirala, Portland, OR (US);
Michael S. Beumer, Portland, OR (US);
Heli Chetanbhai Vora, Hillsboro, OR (US);
Ibrahim Ban, Beaverton, OR (US);
Nityan Nair, Portland, OR (US);
Thomas Hoff, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Structures having backside high voltage capacitors for front side GaN-based devices are described. In an example, an integrated circuit structure includes a front side structure including a GaN-based device layer, and one or more metallization layers above the GaN-based device layer. A backside structure is below and coupled to the GaN-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile