The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jan. 23, 2020
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

William Thie, Fremont, CA (US);

Jisoo Kim, Pleasanton, CA (US);

Alan J. Miller, Woodbridge, CA (US);

Lai Wei, Cupertino, CA (US);

Frank Y. Lin, Fremont, CA (US);

Jun Hee Hee Han, San Ramon, CA (US);

Jie Liu, Union City, CA (US);

Conan Chiang, Cupertino, CA (US);

Michael John Martin, Union City, CA (US);

Nicholas John Celeste, Oakland, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); C23C 16/45512 (2013.01); C23C 16/45561 (2013.01); C23C 16/45565 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

A gas delivery system configured to provide deposition and etch gases to a processing chamber for a rapid alternating process includes a first valve arranged to provide deposition gas from a deposition gas manifold to a first zone of a gas distribution device via a first orifice and provide the deposition gas from the deposition gas manifold to a second zone of the gas distribution device via a second orifice having a diameters than the first orifice. A second valve is arranged to provide etch gas from the etch gas manifold to the first zone of the gas distribution device via a third orifice and provide the etch gas from the etch gas manifold to the second zone of the gas distribution device via a fourth orifice having a different diameter than the third orifice.


Find Patent Forward Citations

Quick Actions:

Thie, William. (2026). Multi-location gas injection to improve uniformity in rapid alternating processes (U.S. Patent No. 12770832). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12770832

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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