Cupertino, CA, United States of America

Lai Wei

This inventor holds 1 USPTO granted patent. Top assignee: Lam Research Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lai Wei. Retrieved from https://idiyas.com/inventor/lai-wei-ed153p7l

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Lai Wei: Semiconductor Process Innovation

Introduction

Lai Wei is an inventor associated with Cupertino, California, and Lam Research Corporation. His patent work addresses gas delivery in semiconductor processing, with a focus on improving uniformity during rapid alternating deposition and etch processes.

Latest Patents

The provided information lists one patent for Lai Wei: “Multi-location Gas Injection to Improve Uniformity in Rapid Alternating Processes.” The patent describes a gas delivery system that supplies deposition and etch gases to separate zones of a processing chamber. Valves and orifices with differing diameters regulate gas delivery to the zones, supporting more uniform processing during rapid alternation between deposition and etching. The listed patent count is 1 patent.

Career Highlights

Wei’s listed invention concerns gas distribution for semiconductor manufacturing. By controlling how deposition and etch gases reach different chamber zones, the system is designed to improve process uniformity.

Collaborations

The provided information identifies Lam Research Corporation as Wei’s company and Jisoo Kim as a coworker. These details indicate a professional connection, but no specific joint patent or collaboration is described.

Conclusion

Lai Wei’s listed patent reflects work on precise gas delivery for semiconductor processing, aiming to improve uniformity in rapid alternating deposition and etch operations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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