The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Jul. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Jui Kuo, Hsinchu City, TW;

Hui-Jung Tsai, Hsinchu, TW;

Jyun-Siang Peng, Hsinchu City, TW;

Chia-Wei Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 70/685 (2026.01); H10W 70/05 (2026.01); H10W 70/60 (2026.01); H10W 74/10 (2026.01);
U.S. Cl.
CPC ...
H10W 70/685 (2026.01); H10W 70/05 (2026.01); H10W 70/611 (2026.01); H10W 74/117 (2026.01);
Abstract

A conductive structure, a semiconductor package and methods of forming the same are disclosed. A conductive structure includes a metal feature, an insulating layer and a nitridized metal layer. The metal feature is disposed over a substrate and includes a lower metal pattern and an upper metal pattern over the lower metal pattern. The insulating layer surrounds the metal feature. The nitridized metal layer is disposed between the lower metal pattern and the upper metal pattern.


Find Patent Forward Citations

Kuo, Hung-Jui. (2026). Method of forming redistribution layer structure (U.S. Patent No. 12765406). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765406

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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