The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
May. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Hung Lin, Taichung City, TW;
Shih-Peng Tai, Hsinchu County, TW;
Kuo-Chung Yee, Taoyuan City, TW;
Chen-Hua Yu, Hsinchu City, TW;
Wei-Ming Wang, Taichung City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device including a first semiconductor die, a second semiconductor die, thermal silicon substrates and an encapsulation is provided. The second semiconductor die is disposed on and electrically connected to the first semiconductor die. The thermal silicon substrates are disposed on the first semiconductor die, wherein the thermal silicon substrates are spaced apart from the second semiconductor die. The encapsulation is disposed on the first semiconductor die. The encapsulation encapsulates the second semiconductor die and the thermal silicon substrates. The encapsulation includes a filling material layer and an insulator, wherein the filling material layer is disposed on the first semiconductor die and located between the second semiconductor die and thermal silicon substrates, and the filling material layer is spaced apart from the second semiconductor die and the thermal silicon substrates by the insulator.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile