The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
May. 24, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Kuan-Hao Cheng, Hsinchu, TW;
Chia-Pin Lin, Hsinchu County, TW;
Wei-Yang Lee, Taipei City, TW;
Tzu-Hua Chiu, Hsinchu, TW;
Wei-Han Fan, Hsin-Chu City, TW;
PO-Yu Lin, New Taipei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Semiconductor devices and methods are provided. In an embodiment, a semiconductor device includes first nanostructures directly over a first portion of a substrate and second nanostructures directly over a second portion of the substrate, n-type source/drain features coupled to the first nanostructures and p-type source/drain features coupled to the second nanostructures, and an isolation structure disposed between the first portion of the substrate and the second portion of the substrate. The isolation structure includes a first smiling region in direct contact with the first portion of the substrate and having a first height. The isolation structure also includes a second smiling region in direct contact with the second portion of the substrate and having a second height, the first height is greater than the second height.