The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Mar. 07, 2024
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Chi Nung Ni, Foster City, CA (US);

Wei Chen, San Jose, CA (US);

Weiming Chris Chen, Hsinchu City, TW;

Vidhya Ramachandran, Cupertino, CA (US);

Jie-Hua Zhao, Cupertino, CA (US);

Suk-Kyu Ryu, Cupertino, CA (US);

Myung Jin Yim, San Jose, CA (US);

Chih-Ming Chung, Cupertino, CA (US);

Jun Zhai, Cupertino, CA (US);

Young Doo Jeon, San Jose, CA (US);

Seungjae Lee, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10D 62/10 (2025.01); H10W 20/43 (2026.01); H10W 42/00 (2026.01); H10W 70/60 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10D 62/117 (2025.01); H10W 20/43 (2026.01); H10W 42/00 (2026.01); H10W 70/611 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 74/01 (2026.01); H10W 74/131 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/792 (2026.01); H10W 90/794 (2026.01);
Abstract

Integrated circuit (IC) structures, electronic modules, and methods of fabrication are described in which direct bonded interfaces are removed at corners or edges to counteract the potential for non-bonding or delamination. This can be accomplished during singulation, in which a side recess is formed through an entire thickness of an electronic component and into a direct bonded die, followed by final singulation of the IC structure.


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