The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Dec. 13, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kristof Darmawikarta, Chandler, AZ (US);

Steve S. Cho, Chandler, AZ (US);

Hiroki Tanaka, Gilbert, AZ (US);

Haobo Chen, Chandler, AZ (US);

Gang Duan, Chandler, AZ (US);

Brandon Christian Marin, Gilbert, AZ (US);

Suddhasattwa Nad, Chandler, AZ (US);

Srinivas V. Pietambaram, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/15 (2006.01); C23C 18/16 (2006.01); C23C 18/18 (2006.01); C23C 18/48 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H10W 70/05 (2026.01); H10W 70/65 (2026.01); H10W 70/66 (2026.01); H10W 70/685 (2026.01); H10W 70/692 (2026.01); H10W 90/00 (2026.01); H10W 70/60 (2026.01); H10W 70/655 (2026.01);
U.S. Cl.
CPC ...
H10W 70/692 (2026.01); C23C 18/1639 (2013.01); C23C 18/165 (2013.01); C23C 18/1855 (2013.01); C23C 18/48 (2013.01); H10W 70/05 (2026.01); H10W 70/095 (2026.01); H10W 70/65 (2026.01); H10W 70/66 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 70/60 (2026.01); H10W 70/655 (2026.01); H10W 90/724 (2026.01);
Abstract

Apparatus and methods for electroless surface finishing on glass. The apparatus comprises a dielectric layer having an upper surface that is characterized by surface variations of less than plus or minus 5 microns and a glass core located under the dielectric layer. Planarity is characterized by having surface variations of less than aboutmicrons, as measured by recesses and/or protrusions. The apparatus further includes conductive elements formed by an electroless NiPdAu process.


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