The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Nov. 03, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Hung Lin, Taipei City, TW;

Wei Hsin Lin, Taichung City, TW;

Hui-Hsuan Kung, Taichung City, TW;

Yi-Lii Huang, Zhubei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract

The present disclosure describes a semiconductor device having fin structures with optimized fin pitches for substantially uniform S/D structures. The semiconductor device includes multiple fin structures on a substrate. The multiple fin structures have a first pitch and a second pitch in an alternate configuration and the second pitch is different from the first pitch. The semiconductor device further includes a gate structure on the multiple fin structures and a source/drain (S/D) structure adjacent to the gate structure and in contact with the multiple fin structures.


Find Patent Forward Citations

Loading…