The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Feb. 03, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Qi Wang, Albany, NY (US);
Hamed Hajibabaeinajafabadi, Albany, NY (US);
Sergey Voronin, Albany, NY (US);
Akiteru Ko, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H10P 50/00 (2026.01); H10P 50/24 (2026.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32477 (2013.01); H01J 37/32862 (2013.01); H10P 50/242 (2026.01); H10P 50/692 (2026.01); H01J 2237/3341 (2013.01); H10P 72/0604 (2026.01);
Abstract
A method for performing an etch process includes forming a first protective layer over chamber walls of a semiconductor process chamber and performing a first etch process on an exposed major surface of a first substrate loaded into the semiconductor process chamber. The exposed major surface includes a first metal oxide resist layer. After performing the first etch process on the first substrate, the first protective layer is removed from the chamber walls with a cleaning process.