Albany, NY, United States of America

Qi Wang

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Innovations of Qi Wang in Resistive RAM Technology

Introduction

Qi Wang is an accomplished inventor based in Albany, NY (US). He has made significant contributions to the field of resistive RAM (ReRAM) technology. His innovative approach focuses on enhancing the performance and stability of ReRAM structures.

Latest Patents

Qi Wang holds a patent titled "Methods for resistive RAM (ReRAM) performance stabilization via dry etch clean treatment." This patent addresses the performance stabilization of ReRAM structures by utilizing a dry chemical gas removal process. This process effectively removes sidewall residue and etch by-products that can adversely affect the ReRAM forming voltage. By employing a combination of HF and NH gases, the dry chemical gas removal process significantly reduces undesirable changes in the ReRAM structure.

Career Highlights

Qi Wang is currently associated with Tokyo Electron Limited, where he continues to advance his research in semiconductor technologies. His work has been pivotal in improving the reliability and efficiency of ReRAM devices.

Collaborations

Qi Wang has collaborated with notable professionals in his field, including Sergey Alexandrovich Voronin and Shyam Sridhar. These collaborations have further enriched his research and development efforts.

Conclusion

Qi Wang's contributions to resistive RAM technology exemplify the innovative spirit of modern inventors. His patent on performance stabilization methods showcases his commitment to enhancing semiconductor technology.

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